Access to Radiation Hardened-, RF-, and Opto-Electronic - Demonstration
Abstract
Government-unique trusted design and manufacturing flows have been developed to enable a tier of trust for select ASIC parts; however, this approach addresses only a small subset of DoD microelectronics requirements (e.g., processors, memory, microcontrollers, field programmable gate arrays (FPGAs), and radiation-tolerant processors). The DoD will partner with the intelligence community, the Department of Energy, and the National Aeronautics and Space Administration to demonstrate radiation hardened components that permit systems to operate in space and other harsh environments. State-of-the-practice (SOTP) and SOTA technologies will be characterized and developed in support of Radiation Hardened By Process (RHBP) and Radiation Hardened By Design (RHBD) activities in support the DoD modernization programs with radiation hardened requirements. Beyond complementary metal-oxide semiconductor (CMOS) and radiation hardened microelectronics, radio frequency (RF)- and opto-electronic (RF/OE) technologies represent critically enable asymmetric DoD capabilities as well as domestic dual-use industrial base capabilities. RF/OE investments will demonstrate RF Gallium Nitride (GaN) and integrated photonic material sources, foundries, and packaging facilities. These investments will break microelectronics bottlenecks which directly enable compact millimeter wave transceivers and artificial intelligence training for edge compute.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2025
- Source ID
- 33f287e8cdb489f8bc37987b26ab4b16