Nitride Electronic NeXt-Generation Technology (NEXT)
Abstract
To realize high performance analog, Radio Frequency (RF) and mixed-signal electronics, a next-generation transistor technology with high cutoff frequency and high breakdown voltage is under development. This technology enabled large voltage swing circuits for military applications that the current state-of-the-art silicon transistor technology cannot support. The objective of the NEXT program was to develop a revolutionary, wide band gap, nitride transistor technology that simultaneously provides extremely high-speed and high-voltage swing [Johnson Figure of Merit (JFoM) larger than 5 Terahertz (THz)-V] in a process consistent with large scale integration of enhancement/depletion (E/D) mode logic circuits of 1,000 or more transistors. In addition, this fabrication process was reproducible, high-yield, high-uniformity, and highly reliable. The accomplishment of this goal was validated through the demonstration of specific program Process Control Monitor (PCM) Test Circuits such as 5, 51 and 501-stage ring oscillators in each program phase. The impact of this next-generation nitride electronic technology is the speed, linearity, and power efficiency improvement of RF and mixed-signal electronic circuits used in military communications, electronic warfare and sensing.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2017
- Source ID
- 385c8b48c3ef451cf09632c96f7d87e6
Related Documents
- Root: ELECTRONICS TECHNOLOGY