Ultra-Wide Bandgap Semiconductors (UWBG)
Abstract
The Ultra-Wide Bandgap Semiconductors (UWBG) program seeks to develop an entirely new class of semiconductor materials that will offer performance breakthroughs for a range of applications when compared to existing compound semiconductors. The electrical bandgap of a material determines breakdown voltage, intrinsic charge carrier density, and color (wavelength) of light emission, and also impacts the maximum output power and operating frequency of a transistor made from the material. Consequently, ultra-wide bandgap materials have considerable interest for the DoD due to the high operating temperatures, currents, voltages, and frequencies often required by emerging high power, agile Radio Frequency (RF) sources for radar, communications, directed energy, and electronic warfare. This program will overcome the fundamental materials and device challenges, such as low-defect substrates, heteroepitaxial material growth, and high-concentration p-type and n-type doping, that currently prevent implementation of UWBG materials into power, RF, and optoelectronic devices and systems.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2024
- Source ID
- 55568d5cc9cfa0c8ceffeb058d2ed331