Diverse & Accessible Heterogeneous Integration (DAHI)
Abstract
Prior DARPA efforts have demonstrated the ability to monolithically integrate inherently different semiconductor types to achieve near-ideal "mix-and-match" capability for DoD circuit designers. Specifically, the Compound Semiconductor Materials On Silicon (COSMOS) program, in which transistors of Indium Phosphide (InP) can be freely mixed with Silicon Complementary Metal-Oxide Semiconductor (CMOS) circuits to obtain the benefits of both technologies (very high speed and very high circuit complexity/density, respectively). The Diverse & Accessible Heterogeneous Integration (DAHI) effort will take this capability to the next level, ultimately offering the seamless co-integration of a variety of semiconductor devices (for example, GaN, InP, GaAs, ABCS), microelectromechanical (MEMS) sensors and actuators, photonic devices (e.g., lasers, photo-detectors) and thermal management structures. This capability will revolutionize our ability to build true "systems on a chip" (SoCs) and allow dramatic size, weight and volume reductions for a wide array of system applications. In the Applied Research part of this effort, High performance RF/optoelectronic/mixed-signal SoCs for specific DoD transition applications will be developed as a demonstration of the DAHI technology. In addition, in order to provide maximum benefit to the DoD, as these processes are developed, they will be transferred to a manufacturing flow and made available (with appropriate computer aided design support) to a wide variety of DoD laboratory, FFRDC, academic and industrial designers. Manufacturing yield and reliability of the DAHI technologies will be characterized and enhanced. This program has basic research efforts funded in PE 0601101E, Project ES-01.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2012
- Source ID
- 658587bcd64db35bc64256526bcbdcff
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- Root: ELECTRONICS TECHNOLOGY