Diverse & Accessible Heterogeneous Integration (DAHI)
Abstract
Prior DARPA efforts have demonstrated the ability to monolithically integrate different semiconductor types to achieve near-ideal "mix-and-match" capability for DoD circuit designers. Specifically, one such program was the Compound Semiconductor Materials On Silicon (COSMOS) program, in which transistors of Indium Phosphide (InP) could be freely mixed with silicon Complementary Metal Oxide Semiconductor (CMOS) circuits to obtain the benefits of both technologies (very high speed and very high circuit complexity/density, respectively). The Diverse & Accessible Heterogeneous Integration (DAHI) program takes this capability to the next level, ultimately offering the seamless co-integration of a variety of semiconductor devices (for example, Gallium Nitride, Indium Phosphide, Gallium Arsenide, Antimonide-Based Compound Semiconductors), micro-electromechanical (MEMS) sensors and actuators, photonic devices (e.g., lasers, photo-detectors) and thermal management structures. This capability will revolutionize our ability to build true "systems on a chip" (SoCs) and allow dramatic size, weight and volume reductions for a wide array of system applications. The Basic Research part of this program focused on the development of new hetero-integration processes and capabilities that, if successful, will be demonstrated in application-specific circuits and transferred into the manufacturing flow. This program has applied research efforts funded in PE 0602716E, Project ELT-01, and advanced technology development efforts funded in PE 0603739E, Project MT-15.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2015
- Source ID
- 8b8f063962d7b96e00639b46860e70c1