Near-Junction Transport (NJTT)
Abstract
Miniaturization and integration in microelectronics have led to a thermal bottleneck where dense logic circuits, mixed-signal analog and digital circuits, and RF electronics are all limited by energy dissipation in the small volumes adjacent to the electronically-active junctions. The Near-Junction Thermal Transport (NJTT) program explored heat conduction and hot spot mitigation through the materials layers near a high-power device junction. This program concentrated on development of specific materials and substrate bonding techniques, as well as microfluidic cooling, to enhance dissipated heat removal in the region of the active junctions of semiconductor chips. Attention was also devoted to development and verification of metrology and quantitative models for heat generation and transport in and near device junctions. Industry leaders with the expertise in developing high-power semiconductor devices are expected to demonstrate devices with significantly enhanced heat density and consequent enhancement in performance metrics. This program was a companion program to the Thermal Management Technologies (TMT) program in PE 0603739E, Project MT-12.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2013
- Source ID
- 8badbdfee4ffc82eca8ba6d6455e518c
Related Documents
- Root: ELECTRONICS TECHNOLOGY