Dynamic Range-enhanced Electronics and Materials (DREaM)
Abstract
The Dynamic Range-enhanced Electronics and Materials (DREaM) program will develop intrinsically linear radio frequency (RF) transistors with improved power efficiency and extremely high dynamic range. Linearity, power efficiency, and dynamic range are fundamental characteristics that allow RF systems to reliably transmit clear signals. Improving these characteristics is essential to operating in a crowded RF environment and to enabling next-generation communication, sensing, and electronic warfare systems. By contrast, existing RF transistor technologies amplify RF signals but produce undesired interference in the RF spectrum due to their poor linearity. Traditional RF transistor design typically requires a trade-off between high linearity and broadcast range. DREAM will overcome this tradeoff by employing new ultra-wide band gap and high carrier mobility materials in novel transistor-level designs and highly-scaled transistor structures. The resulting device technology should allow future RF electronics to increase their operating range without polluting the already-congested RF spectrum while consuming less system power.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2018
- Source ID
- 9081067694280a0706d542f7e448e8aa
Related Documents
- Root: ELECTRONICS TECHNOLOGY