Spin Torque Transfer-Random Access Memory (STT-RAM)

Abstract

(U)The Spin Torque Transfer-Random Access Memory (STT-RAM) program will develop materials and processes to fully exploit the spin-torque transfer (STT) phenomenon for creating “universal” memory elements. This program will develop the core technology for exploiting spin-torque transfer and related phenomena for producing large-scale memories. Compatibility and stability with expected mainstream processes for semiconductor electronics and patterned media is an important attribute that should enable significant leverage for these new technologies in delivering early demonstrations and in gaining wider acceptance.

Document Details

Document Type
Accomplishment
Publication Date
Oct 01, 2011
Source ID
94cca241f1946c94163ddd378d0e8215

Tags

Readers

  • Integrated Circuit Design and Technology.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Software Engineering.

Technology Areas

  • Microelectronics

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