RESEARCH ON SEMI-CONDUCTORS AND TRANSISTOR ELECTRONICS
Abstract
Improvements were made which led to more reproducible data from the electrolytic transistor. Experiments were carried out utilizing the chloride- chlorine and the ferrous-ferric couples. It was found that alpha, where alpha = (delta I sub c/delta I sub e) V sub c, is a strong function of the distance of separation of the emitter and collector. Small variations were observed in the resistance of Ge filaments as the ambient atmosphere was cycled between wet and dry O at constant temperature. Measurements were simultaneously taken of the change in contact potential with light. Measurements revealed that photo- conductivity is generally independent of ambient. The P-N junction resistance change was of the order of a factor of 5; the resistance decreased under the influence of wet O and increased under dry O. Preliminary results of ultrasonic experiments on Ge single crystals indicated that the room-temperature logarithmic decrement was about 3 x 10 to the minus power of 5. The value of Young's modulus along the (100) direction decreased linearly with increasing temperature and was 85% of its 25 deg C value at 900 deg C. A strain amplitude of 2.7 x 10 to the minus power of 4 did not break the crystal; up to this strain and at room temperature, Young's modulus was independent of strain amplitude.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 15, 1953
- Accession Number
- AD0011628
Entities
Organizations
- University of Illinois Urbana–Champaign