Metal and Self-Bonded Silicon Carbide
Abstract
Dense silicon carbide in the range of 95-97% of theoretical density was produced using various grain size mixes of alpha silicon carbide. When beta silicon carbide is used as the grain for hot pressing, uniform densities in the 97 to 98% range of theoretical density are obtained. Hot pressed silicon carbide bonded by Cr:Mo (1:1) has a strength of 31,000 psi, modulus of rupture. This material is relatively stable at high temperatures in air, carbon monoxide and steam. Silicon carbide structures having porosities in the 35 to 40% range may be infiltrated by Hastelloy C under pressure. Chromium-nickel alloys and titanium metal will bond silicon carbide when sintered in vacuum.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 10, 1954
- Accession Number
- AD0050078
Entities
People
- J. R. Tinklepaugh
- L. B. Coffin
- R. A. Alliegro
Organizations
- New York State College of Ceramics