Method and Means for Passivation and Isolation in Semiconductor Devices.
Abstract
In the patent application, the use of ion implantation to offset the effects of doping in semiconductors provides discreet regions of semi-insulated material and reduces the effects of strong bursts of transient radiation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 25, 1972
- Accession Number
- AD0164616
Entities
People
- D. Eirug Davies
Organizations
- United States Department of the Air Force