Method of Making Self Aligned Silicon-Gate Transistors.

Abstract

The patent application concerns a method for fabricating silicon gate field effect transistors by depositing layers of silicon and polycrystalline silicon onto a sapphire or spinel substrate.

Document Details

Document Type
Technical Report
Publication Date
Apr 17, 1974
Accession Number
AD0164756

Entities

People

  • R. S. Ronen

Organizations

  • United States Department of the Air Force

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Patent Applications
  • Patents
  • Polycrystals
  • Sapphire
  • Semiconductor Devices
  • Solid State Electronics
  • Substrates
  • Transistors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Powder metallurgy of Titanium alloys.
  • Surface Engineering/Surface Coating Technology.