AN ANALYSIS OF ELECTRICAL PROPERTIES OF THE PLASTICALLY DEFORMED SEMICONDUCTOR INDIUM ANTIMONIDE
Abstract
THE ELECTRICAL PROPERTIES OF THE SEMICONDUCTOR INDIUM ANTIMONIDE ARE SHOWN TO BE QUITE SENSITIVE TO PLASTIC DEFORMATION BY UNIAXIAL COMPRESSION OR BENDING. COMPRESSION RESULTS IN DECREASES IN BOTH THE CONDUCTIVITY AND WEAK-FIELD MAGNETORESISTANCE COEFFICIENT. IT IS SHOWN THAT THE DECREMENT IN CARRIER MOBILITY AND MAGNETORESISTANCE CAN BE ANALYZED IN TERMS OF A MIXED SCATTERING PROCESS BY ACOUSTIC PHONONS AND IONIZED IMPURITY CENTERS. THESE CENTERS ARE ALMOST EQUALLY DIVIDED BETWEEN VACANCIES IN THE INDIUM AND ANTIMONY SUBLATTICES AND ARE GENERATED BY THE MUTUAL INTERACTIONS OF SCREW-TYPE DISLOCATIONS. PLASTIC BENDING PRODUCES A PREPONDERANCE OF EDGE-TYPE DISLOCATIONS. ASSOCIATED WITH THESE DISLOCATIONS, THERE IS AN ACCEPTOR LEVEL LYING AT ABOUT 0.14 EV BELOW THE CONDUCTION BAND. AT TEMPERATURES BELOW 300 K, THE ACCEPTORS TRAP CONDUCTION ELECTRONS, THUS RESULTING IN A LINEARLY EXTENDED CHARGED SCATTERING CENTER. THE CARRIER MOBILITY IS REDUCED FOR CONDUCTION PERPENDICULAR TO THE DISLOCATIONS, BUT IS UNAFFECTED FOR CONDUCTION PARALLEL TO THEM (PARALLEL TO THE BENDING AXIS). THE HYPOTHESES THAT HAVE BEEN MADE REGARDING THE TYPE OF DISLOCATIONS INTRODUCED ARE CONFIRMED BY OBSERVATIONS ON THE MOTION OF DISLOCATIONS DURING ANNEALING AT 500 C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 12, 1961
- Accession Number
- AD0248979
Entities
People
- Jules Joseph Duga
Organizations
- Battelle Memorial Institute