THEORY OF THE VALENCE BAND ENERGY LEVEL STRUCTURES OF GERMANIUM AND SILICON IN AN EXTERNAL MAGNETIC FIELD
Abstract
THE PROBLEM OF THE VALENCE BAND STRUCTURE OF GERMANIUM AND SILICON IN THE PRESENCE OF AN EXTERNAL MAGNETIC FIELD IS CONSIDERED FROM A QUANTUM MECHANICAL POINT OF VIEW. THE ANALYSIS IS CARRIED OUT USING FIRST AND SECOND ORDER PERTURBATION THEORY. NUMERICAL CALCULATIONS OF THE LANDAU ENERGY LEVELS ARE CARRIED OUT FOR CERTAIN SPECIAL CASES, OF WHICH THE MOST IMPORTANT ARE THE FOLLOWING: ,1) MAGNETIC FIELDS H IN THE 001 DIRECTION, K SUB H EQUALS 0; NONSPHERICAL SYMMETRY CHARACTER OF ENERGY BANDS AND THE COUPLING OF V1 AND V2 BAND 2NCLUDED. (2) MAGNNETIC FIELD H IN THE 001 DIRECTION, K SUB H EQUAL TO 0; NONSPHERICAL SYMMETRY CHARACTER OF ENERGY BANDS INCLUDED, DECOUPLING OF V1 AND V2 BANDS FROM THE V3 BAND ASSUMED. A SET OF ALGEBRAIC EQUATIONS IS DERIVED WHOSE SOLUTION SHOULD YIELD THE VALENCE BAND LANDAU LEVELS FOR THE CASES OF THE MAGNETIC FIELD IN THE 101 AND THE 111 DIRECTIONS. NO NUMERICAL CALCULATIONS ARE PERFORMED FOR THESE CASES. THE RESULTS OF THE CALCULATIONS INDICATE THE PRESENCE OF SOME INTERESTING TRANSITIONS BETWEEN THE LANDAU LEVELS OF GERMANIUM AND SILICON, AS WELL AS THE POSSIBLE PRESENCE OF OTHER INTERESTING EFFECTS WHICH MAY BE OBSERVABLE. CERTAIN OF THESE SEEM TO OFFER POTENTIAL MILLIMETER-WAVE APPLICATIONS POSSIBILITIES, SOME OF WHICH ARE DISCUSSED.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1960
- Accession Number
- AD0250156
Entities
People
- Viktor Evtuhov
Organizations
- California Institute of Technology