STUDY, DEVELOPMENT AND APPLICATION OF TECHNIQUES NECESSARY TO FABRICATE ACTIVE SILICON CARBIDE DEVICES
Abstract
FUNDAMENTAL TECHNIQUES WERE DEVELOPED FOR THE FABRICATION OF SIC DEVICES IN GENERAL AND UNIPOLAR FIELD-EFFECT TRANSISTORS IN PARTICULAR. THE DIFFUSION OF AL VAPOR IN ALPHA-SIC WAS QUANTITATIVELY INVESTIGATED AND THE DIFFUSION-JUNCTION PROCESS WAS DEVELOPED. HEXAGONAL SIC WASGROWN IN THE FORM OF THIN PLATELETS WHICH ARE READY FOR DEVICE FABRICATION. DEVICE FABRICATION PROCESSES INCLUDE THE SINGLE-AND DOUBLE-GATE FUSED JUNCTIONS,SINGLE-GATE GROWN JUNCTIONS, AND SINGLEAND DOUBLE-GATE DIFFUSED JUNCTIONS. ONLY THE DOUBLE-GATE DIFFUSED JUNCTION PROCESS PRODUCED UNIPOLAR TRANSISTORS WHICH EXHIBIT POWER GAIN. THESE DEVICES ARE STILL IN A PRIMITIVE STAGE OF DEVELOPMENT AND WILL REQUIRE FURTHER DEVELOPMENT BEFORE THEY BECOME PRACTICAL DEVICES. AN EXPERI-MENTAL MODEL OF A SIC DOUBLE-GATE UNIPOLAR TRAN-SISTOR WAS DEVELOPED THAT EXHIBITED AC POWER GAIN AS HIGH AS 380 AT ROOM TEMPERATURE AND 7 AT 500 C
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1960
- Accession Number
- AD0250299
Entities
People
- C.z. Lemay
- Hung-chi Chang
- L. Franklin Wallace
Organizations
- Westinghouse Electric Corporation