A RADIATION TECHNIQUE FOR THE MEASUREMENT OF THERMAL CONDUCTIVITY OF SEMICONDUCTORS BETWEEN 1000 AND 2000 C
Abstract
AFTER A STUDY OF ALTERNATIVE METHODS OF SUPPLYING RADIATION ENERGY TO THE SAMPLE, AN EXPERIMENTAL TECHNIQUE WHICH RELIES ON HEATING THE SAMPLE WITH THERMAL RADIATION AT ONE END AND MEASURING THE ENERGY RERADIATED AT THE OTHER END HAS BEEN SELECTED. IN THE APPARATUS, SEMICONDUCTOR SAMPLES OF SUITABLE DIMENSIONS ARE EXPOSED TO THE HIGH HEATFLUX WHICH CAN BE OBTAINED IN AN ELECTRIC ARE IMAGING FURNACE. THE ABSOLUTE TEMPERATURE OF THE SAMPLE IS MEASURED BY MEANS OF AN OPTICAL PYROMETER, WHICH IS ALSO USED TO MEASURE THE TEMPERATURE PROFILES ON THE TWO SAMPLE FACES. DEVELOPMENT WORK WAS CONCERNED WITH (1) ESTABLISHING THE PERFORMANCE CHARACTERISTICS OF THE IMAGING FURNACE, (2) MEASURING THE RADIANT ENERGY CONCENTRATED ON THE SAMPLE, (3) THE DESIGN AND CONSTRUCTION OF THE THERMAL CONDUCTIVITY APPARATUS, (4) THE INSTRUMENTATION, AND (5) CALCULATING PROCEDURES SUITABLE FOR EVALUATING THERMAL CONDUCTIVITY. THE DEVELOPMENT OF THE THERMAL CONDUCTIVITY MEASUREMENT TECHNIQUE IS DISCUSSED
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1960
- Accession Number
- AD0250446
Entities
Organizations
- Arthur D. Little