BETA SILICON CARBIDE

Abstract

The work on growing single-crystal silicon carbide in the cubic phase by gaseous cracking of silicon tetrachloride and by growth from elemental silicon fused in a carbon crucible is summarized. Examples of crystals grown by each of these methods are shown. Crystallographic and electrical measurements are treated. Optical data pertinent to the absorption edge and its temperature dependence as gathered from these samples is discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 30, 1961
Accession Number
AD0253075

Entities

People

  • D.m. Warschauer

Organizations

  • RTX

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Carbides
  • Compound Semiconductors
  • Crucibles
  • Crystals
  • Electrical Measurement
  • Measurement
  • Silicon
  • Silicon Carbide
  • Single Crystals

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Regression Analysis.
  • Spectroscopy.