AN INVESTIGATION OF SURFACE STATES AT A SILICON/SILICON-OXIDE INTERFACE EMPLOYING M-O-S DIODES
Abstract
An investigation was made of the densities and time constants of surface states at a silicon/silicon-oxide interface. The tool used for this investigation was the M-O-S diode, a new solid-state device which, besides being useful for fundamental research of the type presented, also offers at least some potential as a circuit device due to its highly voltage-sensitive capacitance. Since an understanding of the M-O-S diode is essential, a general picture is given of its mode of operation and characteristics. The description given of the operation of the device is intuitive rather than mathematical, to enable the reader to obtain a physical ''feel'' for its operation. A comparison of the capacitance-vsvoltage curves of an idealized M-O-S diode and p-n step junction is presented, and reasons are given for the more rapid change of capacitance with voltage in the M-O-S diode. The effect of the possible existence of surface states at the silicon/silicon-oxide interface is discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 23, 1961
- Accession Number
- AD0253926
Entities
People
- L.m. Terman
Organizations
- Stanford University