AN INVESTIGATION OF CRYSTAL IMPERFECTIONS BY X-RAY DIFFRACTION
Abstract
All sections of the Si crystal showed a complex history of dislocation movement. Dislocation densities varied with distance from the crystal seed from 1000 to 100,000 lines/sq. cm. Interference of dislocations belonging to 2 or more slip systems gives rise to tangles. Several other reactions between individual dislocations were analyzed. X-ray topographs were made of Ge crystals in the form of tapering wedges to study (1) the contrast of images as a function of thickness, (2) the modulation of intensity of diffracted beams as a function of thickness, and (3) the effect of surface irregularities. Crystals of InSb were examined with dislocation densities ranging from about zero to 10,000 lines sq/cm. Progress is reported in heat-treating, etching, and handling of LiF. X-ray topographs of quartz show localized regions of enhanced reflecting power. Work was continued on extending and developing a basic theory of refraction of energy flow and a new approach to the diffraction theory of a distorted crystal.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1961
- Accession Number
- AD0255047
Entities
People
- Andrew R. Lang
Organizations
- University of Bristol