DEVELOPMENT OF PRODUCTION PROCESSES AND TECHNIQUES FOR HIGH VOLTAGE SILICON RECTIFIERS
Abstract
High-voltage silicon rectifiers in the 20,000, 30,000 and 60,000 P.I.V. range for use as clipper diodes in ground and airborne electronic applications can be economically fabricated in production quantities. Successful operation of the rectifiers at extremely high voltages was made possible by resolution of the problems associated with avalanche breakdown, junction forming by diffusion, arcing, stacking of basic cells and packaging. Solution to the problem of arcing under evacuated conditions and packaging contributed most to the success of the program. Test samples furnished to a contractor for application in a fire control system were satisfactory under all conditions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1961
- Accession Number
- AD0255750
Entities
People
- Waylon D. Bryan
Organizations
- Texas Instruments