RESEARCH ON PROPERTIES OF CLEAN SURFACES
Abstract
Experiments to determine the surface band structure of clean surfaces produced by cleavage in ultra-high vacuum have been performed on germanium, silicon, and indium antimonide. A clean Ge surface is highly p-type with the Fermi level at the surface near the valence band. This is brought about by acceptor-like surface states in the valence band with a density of 2 to 3 x 10 to the 12th power/sq cm. The density of these low-lying surface states decreases when the surface is exposed to oxygen. A clean Si surface is nearly intrinsic, possibly slightly n-type, indicating that the dominant surface states near the center of the forbidden gap at the surface. Preliminary results on InSb are reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1961
- Accession Number
- AD0256262
Entities
People
- C.e. Dauenbaugh
- D.r. Palmer
- S.r. Morrison
Organizations
- Honeywell International, Inc.