SEMI-METALS. A NEW HORIZON
Abstract
A study was made of the electrical properties of semi-metals (metals in which the conduction process is carried on simultaneously by bot as being a transition from the valance band located at the center of the zone of conduction band at the edge of the Brillouin zone, or conversely, all at the Fermi surface, in which a phonon of approximately 0.03 ev is emitted. Magnetic oscillation effects at energies less than the direct gap are interpreted to be based on the indirect transition between the es and electrons and in which the number of current carriers is a small but a finite fraction perATOM). The increase in IR tran as being a transition from the valance band located at the center of the zone of conduction band at the edge of the Brillouin zone, or conversely, all at the Fermi surface, in which a phonon of approximately 0.03 ev is emitted. Magnetic oscillation effects at energies less than the direct gap are interpreted to be based on the indirect transition between the valence and conduction bands. The possibilities of semi-metal diodes and tunnel diodes made of Bi-Sb alloys are discussed ed as being a transition from the valance band located at the center of the zone of conduction band at the edge of the Brillouin zone, or conversely, all at the Fermi surface, in which a phonon of approximately 0.03 ev is emitted. Magnetic oscillation effects at energies less than the direct gap are interpreted to be based on the indirect transition between the valence and conduction bands. The possibilities of semi-metal diodes and tunnel diodes made of Bi-Sb alloys are discussed. The conclusion is made that both optical and electrical methods involving the use of high magnetic fields recently developed for semiconductors, can be extended to semi-metals.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 24, 1961
- Accession Number
- AD0256267
Entities
People
- Benjamin Lax
Organizations
- Massachusetts Institute of Technology