THEORETICAL AND EXPERIMENTAL STUDIES CONCERNING RADIATION DAMAGE IN SELECTED COMPOUND SEMI-CONDUCTORS

Abstract

Anomalously low mobilities produced in n-type GaAs as a result of fast-neutron irradiation are interpreted in terms of inhomogenities in the carrier concentration. The very steep temperature dependence of mobility is still a puzzling feature of these irradiations. Annealing of electron-irradiated n-type GaAs can be analyzed in terms of two first-order processes. The first process appears to be independent of the extrinsic properties of the sample. The second process is correlated with the major impurity content or the carrier density. Activation energies for the two processes are respectively, 1.1 + or - 0.08 ev and 1.7 + or - 0.2 ev. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 15, 1961
Accession Number
AD0256340

Entities

People

  • E.m. Baroody
  • L.w. Aukerman
  • R.d. Graft

Organizations

  • Battelle Memorial Institute

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Annealing
  • Corpuscular Radiation
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Energy
  • Fast Neutrons
  • Fermions
  • Heat Of Activation
  • Impurities
  • Ionizing Radiation
  • Mobility
  • Neutron Bombardment
  • Nuclear Radiation
  • Radiation
  • Subatomic Particles

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics