SOLID-STATE ELECTRONICS RESEARCH.
Abstract
Contents: Neuristor studies; Models of thermoelectric devices; Reliable microsystems; Neuristor realization; Photoconductivity-electro-luminescence studies; Improvement of reliability be redundancy and adaption; Adaptive switching circuits; Networks of adaptive memistor neurons; Memistor research; Studies in multi-layer networks of adaptive neurons; Switching type regulators; Variable delay lines for phase modulation; A study of nonlinear distortion of transistors; A study of field-effect switching devices; Studies of breakdown in silicon; Study of hot electrons in silicon; Silicon; Silicon oxide capacitors; Neuristor device study; Hot electrons in germanium; Epitaxial techniques; Surface field-effect amplifiers; Thin-film silicon- carbide devices; Solid state microwave amplifying and generating devices; Large-signal analysis of nonlinear transmission lines; Properties of small contacts to semiconductors; Electron and phonon behavior in solids; High-speed high-current switching devices; Parametric circuits; Diffusion of impurities in III-V compound semiconductors; Adaptive elements; Studies on broadband, solid-state, and optical masers; Parametric amplifiers; and Ferrimagnetic filters and resonators. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1961
- Accession Number
- AD0256668
Entities
Organizations
- Stanford University