APPLICATION OF SEMICONDUCTORS DIODES TO LOW-NOISE AMPLIFIERS, HARMONIC GENERATORS, AND FAST-ACTING TR SWITCHES

Abstract

A study was made to determine the simplest method by which the one-port parametric amplifier could be made voltage tunable over the 1250 to 1400 mc frequency range. A further analysis of the sensitivity of a radar set using a degenerate parametric amplifier was made, and the results indicate tha it is usually desirable to detune the amplifier from the degenerate point. The best commercially-available varactor diodes were evaluated to determine the figures of merit obtainable with them. An experimental C-band degenerate amplifier was evaluated with the aid of a swept signal source. The measured amplifier performance indicated a total fixed-tuned bandwidth of 400 mc with a peak signal-to-signal gain of 19 db and a b oadband noise figure of 1.5 db. A tunnel diode amplifier was designed and tested. A second-harmonic generator using an experimental gallium-arsenide abrupt-junction diode was tested with a fundamental input frequency of 30 kmc. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1960
Accession Number
AD0256741

Entities

People

  • F.g. Haneman
  • J.c. Greene

Tags

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • C Band
  • Diodes
  • Frequency
  • Gallium Arsenides
  • Generators
  • Harmonic Generators
  • Low Noise
  • Low Noise Amplifiers
  • Noise
  • Parametric Amplifiers
  • Semiconductors
  • Tunnel Diodes
  • Varactor Diodes

Fields of Study

  • Physics

Readers

  • Electronics Engineering

Technology Areas

  • Microelectronics