PREPARATION OF ELECTRONIC GRADE SILICON VIA THE IODIDE PROCESS
Abstract
The development of the synthesis process for silicon tetraiodide, and the subsequent purification processes are described. The thermal dissociation systems for silicon tetraiodide utilizing silicon or quartz substrates, or a combination of the two, are described. The development of a continuous system for the preparation of electronic grade silicon via he iodide is presented. The system includes the processes of synthesis, primary purification by distillation, zone melting and thermal dissociation of silicon tetraiodide. The purification factors obtained in the process, as determined by the base boron level of the silicon produced, are presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1961
- Accession Number
- AD0256751
Entities
People
- John T. Buford
- R.j. Starks