TUNNEL DIODE CIRCUITS FOR SWITCHING THIN FILM MEMORIES
Abstract
Tunnel-diode circuits are investigated theoretically as a source of high-speed current pulses capable of switching thin film memories in the order of tens of millimicroseconds. Break-point models of the characteristic curve are constructed and piecewise linear analysis is used to predict and extrapolate experimental results. Three basic circuits were chosen as drivers for various load forms and levels. These were tried in the laboratory and results are given. Each of these circuits utilized a novel quick-recovery feature which was responsible for about one-half to two-thirds of the sum of the diode peak currents necessary for a given load current. The recovery time was made equal to the pulse width, which was 20 millimicroseconds. The triggering delay time was approximately one-half the pulse width for all three circuits. It was concluded that tunnel diodes can be used to drive thin magnetic films in strip lines at the speed desired. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1961
- Accession Number
- AD0257015
Entities
People
- Paul C. Davis
Organizations
- Massachusetts Institute of Technology