A HALL EFFECT MICROWAVE POWER METER
Abstract
The measurement of Hall voltages at frequencies of 3500 and 9050 mc and its application to the measurement of microwave power is described. The Hall crystals used were fabricated from indium arsenide and indium arsenide phosphide, both members of the semiconductor class knownAS THE INTERMETALLIC COMPOUNDS. These materials were chosen because they possess a large electron mobility at room temperature, and thus exhibit a pronounced Hall effect capability. The results obtained show approximately two orders of magnitude of improvement over other reported work in this area and are believed to be the first reported measurement of a Hall voltage at microwave frequencies using the intermetallic compounds. The design of a Hall effect microwave power meter capable of accurately measuring from 1 to 250 watts of CW power at S-band frequencies is described. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1961
- Accession Number
- AD0257311
Entities
People
- Anthony D. Rugari
Organizations
- Rome Laboratory