APPLICATION OF TUNNELING TO ACTIVE DIODES
Abstract
A description is given of a simple means of masking against epitax al GaAs crystal growth on a GaAs seed. The properties of manganese-doped GaAs tunnel diodes are described. An allgermanium-doped GaAs tunnel diode and its properties are described. The dependence of hump tunnel currents upon minority carrier injection in a variety of tunnel diodes is outlined. Some of the measured properties of manganese-doped GaAs are presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1961
- Accession Number
- AD0257423
Entities
People
- N. Jr. Holonyak
Organizations
- General Electric