REFRACTORY COATINGS FOR TUNGSTEN
Abstract
A study of the feasibility of protecting W wires against oxidation at 3300 F was undertaken. An WSi2 coat was the most promising coating for this temperature. Several siliconizing methods were given a cursory treatment, and the simplest, cementation, was selected for closer investigation. This operation was performed under flowing H atmosphere and such variables as temperature, time, and composition of the cementation pack. A single brittle WSi2 layer is formed by this method. Pack-siliconized wires can withstand oxidation at 3300 F in still air for 10 or more hours. A drawback of the disilicide coat is its low temperature oxidation which occurs in parts exposed at 1200 and 2280 F for prolonged periods. Attempts to deposit ZrO2 on top of siliconized wires by means of plasma arc spray method remained largely unsuccessful. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1961
- Accession Number
- AD0258574
Entities
People
- C.g. Goetzel
- P. Landler
Organizations
- New York University