MEASUREMENT OF PHONON SCATTERING IN SILICON

Abstract

The electrical coupling by phonons of 2 isolated layers provides a new method which is used to study the propagation properties of phonons in single crystal silicon at a temperature of 77 K. Measurements are given for phonon scattering by holes, dislocations and oxygen precipitates, with a simple analysis of the results on phononphonon scattering. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1961
Accession Number
AD0258590

Entities

People

  • Kurt Hubner

Tags

DTIC Thesaurus Topics

  • Couplings
  • Crystals
  • Dislocations
  • Measurement
  • Precipitates
  • Scattering
  • Single Crystals

Readers

  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.