A STUDY OF FUNDAMENTAL MECHANICAL PROPERTIES OF CERAMIC SINGLE CRYSTALS
Abstract
The preparation and growth of crystals of SiC in solid solution with B is well advanced. Up to about 4.5wt-% B will go into solid solution with SiC. The amount of B present in the SiC is independent of the initial form of the B. B has been added to SiC, prior to heating, in the form of BN, B4C, B2O3 and elemental B. In each case, the limit of 4.5% B was not exceeded. Nitrogen analyses indicate a variation in N content from experiment to experiment, but no correlation can be made between B content and N content. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 27, 1961
- Accession Number
- AD0261518
Entities
People
- H. Dean Batha
- Richard M. Drake