MICROWAVE SOLID-STATE DEVICES
Abstract
Some considerations pertinent to the problem of designing and properly evaluating varactor diodes for low-noise amplification are discussed. The zero bias cut-off frequency (f sub co) is used as a figure of merit for electrical performance, since this is a readily measurable number which is related in the first order to performance for the similar types of p-n junction considered. In developing the GaAs varactor, emphasis is being placed on improving the structure, doping profiles, and contacts, with the complications of reduced area assigned for future investigation. A discussion of the factors important in evaluating the relative figures of merit of varactor diodes is given. The various process steps necessary to produce the thin-wafer GaAs structure are reviewed. A symmetrical model for the PIN diode structure has been used to compute approximately the ac impedance for a PIN protector diode in terms of the device parameters. Comparison with experiment indicates only semiquantitative agreement. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1961
- Accession Number
- AD0261970