STUDY OF MICROJUNCTION FORMATION TECHNOLOGY

Abstract

Research was continued on electron beam processing of semiconductor structures. After presenting details of the various experimental apparatus used and of the procedures followed in sample preparation, theoretical and experimental results on the formation of P-N junctions by electron beam processing are given. The theory of the dependence of processing temperature on sample geometry is developed, the heating capabilities of the electron beam are demonstrated, and various techniques for electron beam welding and alloying of different metals into silicon surfaces are reported. Aluminum-silicon P-N junctions are investigated in great detail and it is shown clearly that diodes with excellent electrical characteristics can be produced by this technique. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1961
Accession Number
AD0262411

Entities

People

  • A. Ramsa
  • R. Engelmann

Tags

DTIC Thesaurus Topics

  • Aluminum
  • Compound Semiconductors
  • Electron Beam Welding
  • Electron Beams
  • Electron Irradiation
  • Electronics
  • Electrons
  • Extrinsic Semiconductors
  • Geometry
  • Metals
  • P-N Junctions
  • Semiconductors
  • Solid State Electronics
  • Welding

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Metallurgy
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy
  • Microelectronics