ELECTRON SPIN RESONANCE IN SEMICONDUCTING RUTILE

Abstract

The electron spin resonance spectra of a number of samples of single-crystal, oxygen-deficient rutile have been examined in the helium temperature range. Room temperature resistivities (c axis) ranged from 0.76 to 94 ohm cm. The method of reduction is found to be a determining factor in the nature and temperature dependence of the spectra. The simple spectrum already reported for a 10 ohm cm sample, is found only after reduction in hydrogen followed by partial reoxidation. This spectrum degenerates as the temperature is raised to 12 K to be replaced by a single line which corresponds to the motionally narrowed line observed in lower resistance (0.76 ohm cm) samples. Reduction in vacuum leads to distinctly different spectra with different temperature dependence but with similar g values. Measurements of resistivity vs temperature indicate higher activation energies for vacuum-reduced samples. Possible models for the observed paramagnetic centres are put forward and discussed in relation to the defect structure and electrical properties. The low temperature spectra of niobium- and tantalum-doped rutile indicate that the donor centres in these materials are Nb4 and Ta4 rather than Ti3. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1961
Accession Number
AD0262457

Entities

People

  • P.f. Chester

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Electrical Properties
  • Electron Spin Resonance
  • Electrons
  • Heat Of Activation
  • Low Temperature
  • Magnetic Resonance
  • Materials
  • Resonance
  • Single Crystals
  • Spectra
  • Spin Resonance

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene