Final Report,
Abstract
Research was concerned with crystal growth mechanisms through the study of dendritic growth in diamond-lattice semiconductors, specifically germanium, silicon, and indium antimonide. Dendrites of these materials grow, in a supercooled melt, as long, narrow ribbons having a central core of twin planes. The ribbon faces can be made to be nearly atomically flat. The process of elongation of the dendrite involves the twinned core structure as a necessary part of the growth. Thickening and widening appear to depend on other growth mechanisms which do not involve the twin planes. The presence of impurities at concentrations of the order of 10 to the 18th power atoms/cc or more affect the growth habit in a fashion not yet quantitatively understood. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 07, 1961
- Accession Number
- AD0262598
Entities
People
- A.i. Bennett
- R.i. Longini
Organizations
- Westinghouse Electric Corporation