APPLICATIONS OF TUNNELING TO ACTIVE DIODES
Abstract
Measurements of the temperature and voltage dependence of tunneling in Ge and GaSb are reported which give values for the separation between the (000) and (111) conduction band edges in these semiconductors. Revised values of the longitudinal optical phonon energies in 3-5 and lead salt semiconductors are summarized. Factors which limit the current gain in metal-insulator tunnel triodes are discussed. A considerable body of theoretical and experimental evidence indicates that current gains greater than 0.01 to 0.1 should be difficult to achieve. Further data on the solubility and diffusion of Cu in p-type GaAs are reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 07, 1961
- Accession Number
- AD0263815
Entities
People
- J.h. Racette
- R.n. Hall
Organizations
- General Electric