APPLICATION OF TUNNELING TO ACTIVE DIODES

Abstract

Hump tunnel currents and associated trapping effects which are observed in GaAs tunnel diodes contaminated with impurities such as Mn, Cu, and Au are described. The relationship of these effects to l/f noise is indicated. Halogen vapor transport and epitaxial growth of GaAs and GaAs space charge limited emission diode are described. The halogen vapor transport, synthesis, and epitaxial growth of GaP on GaP and GaAs is also described. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 07, 1961
Accession Number
AD0263816

Entities

People

  • N. Jr. Holonyak
  • S.f. Bevacqua

Organizations

  • General Electric

Tags

DTIC Thesaurus Topics

  • Diodes
  • Electron Emission
  • Emission
  • Epitaxial Growth
  • Impurities
  • Quantum Tunneling
  • Space Charge
  • Transport Ships
  • Tunnel Diodes
  • Tunneling
  • Tunnels

Fields of Study

  • Materials science

Readers

  • Groundwater Contamination Remediation.
  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.

Technology Areas

  • Space