ELECTRICAL PROPERTIES OF NON-STOICHIOMETRIC SEMICONDUCTORS
Abstract
The electrical conductivity, thermoelectric power, and Hall coefficient are examined as a function of the ratio of hole-to electron concentrations p/n for a non-degenerate semiconductor at constant temperature. From these relations the fundamental parameters of the material (forbidden band gap, mobilities and effective masses) can be derived. This approach is particularly applicable to materials whose stoichiometry varies as a function of temperature and vapor pressure of the constituents, P. For any model of this equilibrium decomposition, it is easy to transform the calculations in terms of p/n into results as a function of P. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1961
- Accession Number
- AD0263938
Entities
People
- H.p.r. Frederikse
- J.h. Becker
Organizations
- National Institute of Standards and Technology