THE TRAVELLING SOLVENT METHOD OF CRYSTAL GROWTH

Abstract

INITIAL STUDIES WERE MADE OF THE DISSOLUTION RATE OF GaAs in Ga as a function of temperature. Additional experiments were performed to investigate the effect of crystal orientation of the dissolution rate. A small flat disc of polycrystalline GaAs was held by suction onto a ground face of a quartz tube and then immersed in Ga at a series of increasing temperatures. It was established that the amount dissolved at ANY GIVEN TEMPERATURE INCREASED LINEARLY WITH TIME. A marked preferential etching of polycrystalline GaAs by Ga was noted. After etching a single crystal sphere in Ga at 550 C and removing surplus Ga by etching in HCI solution, it was observed that the sphere developed a number of inchoate facets which were not quite flat. A subsequent etch at higher temperature removed all evidence of facet development. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 17, 1961
Accession Number
AD0263967

Entities

People

  • A.i. Mlavsky

Tags

DTIC Thesaurus Topics

  • Critical Temperature
  • Crystal Growth
  • Crystal Structure
  • Crystallization
  • Crystals
  • Glass Transition Temperature
  • Orientation (Direction)
  • Polycrystals
  • Single Crystals
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Materials Science and Engineering.
  • Semiconductor Device Technology