EQUILIBRIA IN GROUP III-V SEMICONDUCTORS CONTAINING GROUP IV SUBSTITUENTS

Abstract

A discussion is presented on the properties of Group IV substituents in Group III-V compounds. The electrical properties of GaSb with Sn as a substituent are calculated from thermodynamic considerations. The cases of a substituent as an acceptor or a donor, and of pair formation are considered. The general approach has been to calculate the free energy difference for substitution of a Group IV atom in a Group III and in a Group V site. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 12, 1961
Accession Number
AD0264143

Entities

People

  • Allen B. Scott

Organizations

  • SRI International

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electrical Properties
  • Electronics
  • Energy
  • Free Energy
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics

Fields of Study

  • Chemistry

Readers

  • Organic Chemistry
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics