Investigation of Integrally Composed Variable Energy GaP Photovoltaic Solar Energy Converter
Abstract
GaP as a discrete phase was produced by the diffusion of P into GaAs. Concentration of discrete phase GaP in diffused powder was determined by x-ray studies to be 82.3 percent, with GaAs de4termined as 17.7 percent. An advantage of variable gap GaP-GaAs cells over single gap GaAs cells is indicated in elevated temperature characteristics, particularly in I sub sc change. Zn diffusion by the open tube H technique offers excellent junction depth control and expedites fabrication over the sealed ampoule techniques. Reliable ohmic contacts to p type GaAs can be produced by sputtering with Pt followed by coating with solder or baking on Ag paste.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 10, 1961
- Accession Number
- AD0264302
Entities
People
- L. E. Stone
- W. E. Medcalf