RESEARCH INVESTIGATIONS IN THE PHYSICAL CHEMISTRY AND METALLURGY OF SEMICONDUCTING MATERIALS
Abstract
An epitaxial film of B of controlled thickness was grown on a single crystal of B by the H reduction of BBr3. The deposit had the orientation of the substrate. The resistivity, as determined by the 4-point probe method, was 1.3 to 1.4 ohm-cm over an area of approximately 1 sq cm. The film was p-type as determined by the hot probe method. Polycrystalline B films were grown on alumina substrates, using the same procedure. P-n junctions were produced in B of single crystal or nearly single crystal structure by diffusion of W at 1350 C for a period of 12 hr. The determination of C in B by the Leco conductometric method as used in the determination of C in steel was studied further and improvements were made in the procedure and design of equipment. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 15, 1961
- Accession Number
- AD0264303
Entities
People
- K.e. Bean
- R.j. Starks
- W.e. Medcalf