INVESTIGATION OF SEMICONDUCTING PROPERTIES OF II-VI COMPOUNDS
Abstract
The possibility of using Cu or Au as p-type dopants in CdS has been explored. Analytical techniques for determining the amount of total and the approximate proportion of uncompensated Cu in CdS have been developed. Investigation of different methods of producing uncompensated ZnSe has led to a novel technique of producing n-type ZnSe with fairly good transport properties. Structures consisting of epitaxial films of hexagonal n-type CdS on cubic p-type ZnTe single crystals have been studied with respect to their crystallographic and electrical properties. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1961
- Accession Number
- AD0264310
Entities
People
- M. Aven
- W.w. Piper
Organizations
- General Electric