MEASUREMENTS OF SHOT NOISE IN TUNNEL DIODES AT LOW FORWARD VOLTAGES
Abstract
An accurate method for experimentally determining the equivalent shunt noise-current generator in tunnel diodes in the low positive-resistance regions is described. Using this method, shot-noise measurements were made on a type 1N2939 tunnel diode in the bias range from zero voltage to the peak point, and athree temperatures (203K, 300K, and 373K). The results are presented and compared with calculated noise values. Excellent agreement obtained suggests that the existing theory of shot-noise in tunnel diodes in the low-bias region is adequate.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1961
- Accession Number
- AD0264348
Entities
People
- Carl N. Berglund
Organizations
- Massachusetts Institute of Technology