MATERIALS FOR THERMOELECTRIC GENERATORS
Abstract
The solidification and electronic characteristics of CdSb, ZnSb, and alloys of the system Zn sub x Cd sub 1-x Sb were studied for application to thermoelectric devices. CdSb single crystals were prepared and pertinent electronic data were obtained. IR absorption in the (100) direction of single crystal samples of CdSb gave a value for the energy gap at room temperature for indirect transitions of 0.45 ev with a temperature variation of -6 x 10 to the -4th ev/degree K. From resistivity, Hall coefficient and Seebeck coefficient data the energy gap at 0 K was calculated to be 0.57 ev, the mobility ratio 0.9, and the whole effective mass was found to increase with temperature from 0. to 0.38 between 100 and 300 K. The conductivity was found to be anisotropic, the three principal conductivities being the ratio sigma 010:100:001 equals 1.45:1.09:1.00. The phase relations between ZnSb and CdSb also show metastable-stable reactions. In the metastable system the section Zn sub x Cd sub 1-x Sb shows a eutectic at about Zn0.1Cd0.9Sb. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1961
- Accession Number
- AD0264375
Entities
People
- Eric Miller
- F. Ermanis
- I. Cadoff
Organizations
- New York University