HIGH TEMPERATURE SEMICONDUCTOR RESEARCH

Abstract

Optical measurements on GaAs-GaP alloys disclosed a narrow transmission band at .065 ev. Attempts were carried out to grow GaAs single crystals in quartz and BN boats by the horizontal Bridgman technique using direct RF induction heating. A study of the GaAs-I2 system was started using u-v spectroscopic analysis of the vapor. Studies of impurity and non-stoichiometry effects in GaAs were continued. Unusual mobility effects in GaAs such as mobility killers and giant scattering cross sections are explained by generalizing the model of Gossick, Crawford, and Cleland. An energy level model is presented to explain the occurrence of high resistivity GaAs, without invoking automatic compensation or even a high degree of compensation. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1961
Accession Number
AD0264438

Entities

People

  • J. Blanc
  • R.h. Bube

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Automatic
  • Compensation
  • Compound Semiconductors
  • Crystals
  • Electronics
  • Energy Levels
  • Heating
  • High Temperature
  • Impurities
  • Induction Heating
  • Measurement
  • Mobility
  • Scattering
  • Scattering Cross Sections
  • Semiconductors
  • Single Crystals

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene