LOW TEMPERATURE ELECTRON TRAPPING LIFETIMES AND EXTRINSIC PHOTOCONDUCTIVITY IN N-TYPE SILICON DOPED WITH SHALLOW IMPURITIES
Abstract
The trapping lifetimes tL are generally independent of temperature between 4.2 K, and 1.2 K, and are inversely proportional to the compensating acceptor concentration. This latter was determined using a recently developed combined infrared radiation and spin resonance method. The trapping cross-section result for phosphorus donors is about 000,000,000,005 square centimeters at 3 K. This is about an order of magnitude larger than the value obtained from the giant trap theory of M. Lax. Also, the concentration independence of the cross-section in the region of temperature independent tL is not accounted for easily. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1961
- Accession Number
- AD0264468
Entities
People
- A. Honig
- R. Levitt
Organizations
- Syracuse University