INDUSTRIAL PREPAREDNESS MEASURE ON SILICON HIGH FREQUENCY POWER TRANSISTOR

Abstract

Work done on both the base and emitter diffusions resulted in an over-all yield from diffusions of 45%. This yield is judged from transistors which meet the leakage specifications at 60 volts and at 150 volts These transistors are measured while they are on the silicon slice and have no contacts on them. The yield from transistors which go through the normal fabrication process is considerably lower due to subsequent operations. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1961
Accession Number
AD0264814

Entities

People

  • David O'brien

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Diffusion
  • Fabrication
  • Frequency
  • Frequency Bands
  • Industrial Preparedness
  • Radio Frequency
  • Specifications
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Plasma Physics.
  • Software Engineering