STRUCTURE STUDIES OF IMPERFECTIONS IN CRYSTALS
Abstract
Two procedures for studying imperfections present in crystals are described. In one, electron density distributions in pure and doto determine the imperfections present. This method was sufficiently sensitive to clearly establish the presence and amount of interstitial zinc atoms in ZnO. This excess zinc atom concentration led to the development of a diffusion theory for binary compounds. The second method makes use of the dynamical theory of x-ray diffraction to interpret intensity variations from single crystals in terms of imperfections ed CdS and ZnO crystals were obtained and their differences used to determine the imperfections present. This method was sufficiently sensitive to clearly establish the presence and amount of interstitial zinc atoms in ZnO. This excess zinc atom concentration led to the development of a diffusion theory for binary compounds. The second method makes use of the dynamical theory of x-ray diffraction to interpret intensity variations from single crystals in terms of imperfections present in such crystals. It has been applied successfully to transistor grade Si crystals. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1961
- Accession Number
- AD0264936
Entities
People
- Leonid V. Azaroff
Organizations
- Illinois Institute of Technology